UT Power Engineering Laboratory - "Powering the Future"

System Impact of Silicon Carbide Power Electronics for Hybrid Electric Vehicles


Sponsored by Oak Ridge National Laboratory

Team

Dr. Leon M. Tolbert
Burak Ozpineci

Description

Silicon carbide power electronics devices have superior characteristics compared to conventional silicon devices. The use of these devices will likely revolutionize the future power electronics industry. Various Silicon carbide devices have been developed to integrate with power systems to improve the system performance. This project involves modeling and design of silicon carbide devices and the study of device benefits at the system level. Gate turn-off thyristors are investigated in a HVDC system. The modern voltage source based converter technology has been implemented to study the effect of silicon carbide GTO thyristor in a HVDC system. The device loss model has been developed based on the device physics and device operation. The conduction and switching losses of the device have been simulated in various operating conditions and for both silicon and silicon carbide. The project focuses on the comparison between silicon and silicon carbide devices in terms of efficiency, costs, operating temperature and thermal management, and the corresponding effect on system performance.

Software


Matlab 6.1, Simulink, PSCAD 4.01.

Results

research_SiC_01
Fig 1. Device Simulation for J=200 A/Cm2, V= 5000V

research_SiC_02
Fig 2. Switching Losses of SiC GTO Thyristor

Related publications and presentations


L. M. Tolbert, B. Ozpineci, S. K. Islam F. Z. Peng, "Impact of SiC Power Electronic Devices for Hybrid Electric Vehicles," SAE 2002 Transactions Journal of Passenger Cars - Electronic and Electrical Systems, September 2003, pp. 765-771.

B. Ozpineci, L. M. Tolbert, S. K. Islam, "System Level Benefits of SiC Power Devices in DC-DC Converters," European Conference on Power Electronics and Applications , September 2-4, 2003, Toulouse, France.

B. Ozpineci, L. M. Tolbert, S. K. Islam, M. Hasanuzzaman, "System Impact of SiC Power Devices," International Journal of High Speed Electronics and Systems, vol. 12, no. 2, 2002, pp. 439-448.

B. Ozpineci, L. M. Tolbert, S. K. Islam, "Silicon Carbide Power Device Characterization for HEVs," IEEE Workshop on Power Electronics in Transportation, October 24-25, 2002, Auburn Hills, Michigan, pp. 93-97.

B. Ozpineci, L. M. Tolbert, S. K. Islam, M. Hasanuzzaman, "A Parametric Device Study for SiC Power Electronics," IEEE Industry Applications Society Annual Meeting, October 13-17, 2002, Pittsburgh, PA, pp. 570-575.

B. Ozpineci, L. M. Tolbert, S. K. Islam, F. Z. Peng, "Testing, Characterization, and Modeling of SiC Diodes for Transportation Applications," IEEE Power Electronics Specialists Conference, June 23-27, 2002, Cairns, Australia, pp. 1673-1678.

L. M. Tolbert, B. Ozpineci, S. K. Islam F. Z. Peng, "Impact of SiC Power Electronic Devices for Hybrid Electric Vehicles," 2002 Future Car Congress Proceedings, June 3-5, 2002, Arlington, Virginia. (SAE paper number 2002-01-1904).

B. Ozpineci, L. M. Tolbert, S. K. Islam, M. Hasanuzzaman, "Effects of Silicon Carbide (SiC) Power Devices on PWM Inverter Losses," The 27th Annual Conference of the IEEE Industrial Electronics Society, November 29 - December 2, 2002, Denver, Colorado, pp. 1061-1066.

Contact Information

Contact Information

Min H. Kao Engineering Building
http://power.eecs.utk.edu/