UT Power Engineering Laboratory - "Powering the Future"

Semiconductor Reliability for Automotive and Power System Applications


Dr. Leon M. Tolbert
Lakshmi GopiReddy
Andrew Weresczak
Burak Ozpinecci
Madhu Chinthavali


The reliability of semiconductor devices plays a significant role in the reliability of the system for both automotive and power system applications. Initially, IGBT devices are considered for electrical reliability testing and later extended to other devices like MOSFET, thyristors and GTOs.

The main objective of this project is to develop electrical stress testing methods similar to the mechanical stress reliability tests. Most of the current life testing methods have temperature as a major or supplementary stress to validate the life of semiconductor. Voltage and current stress testing are the predominant testing waveforms considered for this purpose. On validating the degradation of the semiconductors with electrical stresses, simulation and mathematical models would be developed.

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Min H. Kao Engineering Building